| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a III-V compound semiconductor having a low dislocation density without increasing the thickness of the regrown layer by a regrowing method using a mask pattern, and to provide a III-V compound semiconductor having a low dislocation density. SOLUTION: The III-V compound semiconductor has a first III-V compound semiconductor which is expressed by general formula InuGavAlwN (in the formula, 0<=u<=1, 0<=v<=1, 0<=w<=1, u+v+w=1), a pattern of a material different from that of the first III-V compound semiconductor and an after-mentioned second III-V compound semiconductor on the first III-V compound semiconductor, and the second III-V compound semiconductor which is expressed by general formula InxGayAlzN (in the formula, 0<=x<=1, 0<=y<=1, 0<=z<=1, x+y+z=1) on the first III-V compound semiconductor and the pattern. In this case, a gap is provided on the pattern and a through dislocation in the second compound semiconductor layer which is grown from the opening of the pattern is ended by the gap of the pattern.
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