发明名称 Methods of manufacturing integrated circuit devices having an encapsulated insulation layer
摘要 An integrated circuit device is manufactured by forming an insulating layer on a substrate. A capping layer is formed on the insulating layer and both the capping layer and the insulating layer are patterned. Insulating spacers are formed on sidewalls of the insulating layer so that the insulating spacers, the capping layer, and the substrate enclose the insulating layer.
申请公布号 US2002072250(A1) 申请公布日期 2002.06.13
申请号 US20010008700 申请日期 2001.12.07
申请人 JEONG HONG-SIK;SHIN SOO-HO;YANG WON-SUK;KIM KI-NAM 发明人 JEONG HONG-SIK;SHIN SOO-HO;YANG WON-SUK;KIM KI-NAM
分类号 H01L21/31;H01L21/316;H01L21/60;H01L21/768;H01L23/532;(IPC1-7):H01L21/320;H01L21/476;H01L21/469 主分类号 H01L21/31
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