发明名称 |
Methods of manufacturing integrated circuit devices having an encapsulated insulation layer |
摘要 |
An integrated circuit device is manufactured by forming an insulating layer on a substrate. A capping layer is formed on the insulating layer and both the capping layer and the insulating layer are patterned. Insulating spacers are formed on sidewalls of the insulating layer so that the insulating spacers, the capping layer, and the substrate enclose the insulating layer.
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申请公布号 |
US2002072250(A1) |
申请公布日期 |
2002.06.13 |
申请号 |
US20010008700 |
申请日期 |
2001.12.07 |
申请人 |
JEONG HONG-SIK;SHIN SOO-HO;YANG WON-SUK;KIM KI-NAM |
发明人 |
JEONG HONG-SIK;SHIN SOO-HO;YANG WON-SUK;KIM KI-NAM |
分类号 |
H01L21/31;H01L21/316;H01L21/60;H01L21/768;H01L23/532;(IPC1-7):H01L21/320;H01L21/476;H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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