| 摘要 |
<p>There is disclosed a device for imaging radionuclide emissions comprising: a charge coupled device or CMOS active pixel sensor device; and a scintillator layer in direct contact with the charge coupled device or CMOS active pixel sensor device; in which the thickness of the scintillator layer is greater than 200 µm, preferably greater than 400 µm, most preferably about 500 µm.</p> |
