Semiconducting layer system has local modification of band edge profile by introduction of complementary doping material to form potential well for complementary charge carriers

摘要

The system has an active region of at least two layers of different semiconductors with a band offset at a boundary layer. Doping material of one type is present and a potential well for charge carriers is formed on the other side of the boundary surface. Local modification of the band edge profile is achieved by subsequent introduction of doping material of the complementary type to form a potential well for the complementary charge carriers.