Verfahren zur Herstellung von Halbleitermodulen sowie nach dem Verfahren hergestelltes Modul

摘要

According to the invention, the connection side of an undivided semiconductor wafer (1) is directly connected to a thermoplastic film (2), whose thermal expansion coefficient is approximately as low as that of the semiconductor material. Protuberances (21) are moulded onto the exposed underside of the film (2) by a hot embossing process, said protuberances acting as elastic external connections (25) and being connected in a conductive manner to internal connections (24) or to the wafer terminal elements (11) via passages (22). Individual semiconductor modules or packages that can be contacted on a printed circuit board by means of the plastic protuberances (21) are produced by dividing the finished contacted wafer. Said method allows semiconductor chips to be contacted on an intermediate support and the intermediate support to be contacted on a printed circuit board in a simple manner, ensuring a temperature-resistant connection between the semiconductor and the printed circuit board, without additional compensatory materials.