| 摘要 |
<p>A CMOS inverter having a heterostructure including a Si substrate, a relaxed Si1-xGex layer; and a pMOSFET and an nMOSFET, wherein the channel of said pMOSFET and the channel of the nMOFSET are formed in the strained surface layer. Another embodiment provides an integrated circuit having a heterostructure including a Si substrate, a relaxed Si1-xGex layer on the Si substrate, and a strained layer on the relaxed Si1-xGex layer; and a p transistor and an n transistor formed in the heterostructure, wherein the strained layer comprises the channel of the n transistor and the p transistor, and the n transistor and the p transistor are interconnected in a CMOS circuit.</p> |
