| 摘要 |
<p>An electron beam exposure system for exposing a pattern on a wafer using a plurality of electron beams, comprising a section for generating a plurality of electron beams, a mark part being irradiated with an electron beam in order to detect the irradiating position of an electron beam, and a section for detecting electrons radiated from the mark part and outputting a detection signal based on a detected quantity of electrons.</p> |
