发明名称 DRIVER FOR AN EXTERNAL FET WITH HIGH ACCURACY AND GATE VOLTAGE PROTECTION
摘要 A circuit for driving an external FET (12) comprises a differential amplification stage (4, 5, 8) supplied by a first and second operating potential (Vdd, Vss). An output load resistor (6) is included in a current flow path (3), the current flowing through therein is controlled by the voltage between two input terminals (9, 10) of the amplification stage (4, 5, 8) and is substantially independent of variations of the first or second operating potentials (Vdd, Vss). The output load resistor (6) is connected between the gate and source of the external FET 12.
申请公布号 WO0247257(A1) 申请公布日期 2002.06.13
申请号 WO2001EP14120 申请日期 2001.12.03
申请人 INFINEON TECHNOLOGIES AG;BERNARDON, DEREK;MUELLAUER, MARKUS 发明人 BERNARDON, DEREK;MUELLAUER, MARKUS
分类号 H03F3/45;H03K17/60 主分类号 H03F3/45
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