摘要 |
A barrier/liner structure (10) and method. First, a refractory metal/metal nitride layer (12) is formed over a structure (18), for example, by metal-organic CVD (MOCVD). Then, the refractory metal/metal nitride layer (12) is exposed to an organosilane, such as diethylsilane, to obtain a silicon-rich surface layer (14).
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