| 发明名称 |
Hard-mask etch process |
| 摘要 |
A method is described for forming a patterned polysilicon, amorphous, or single crystal silicon layer. The method comprises forming a consumable mask (50, 60) that is simultaneously removed while etching the underlying film (30).
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| 申请公布号 |
US2002072225(A1) |
申请公布日期 |
2002.06.13 |
| 申请号 |
US20010967165 |
申请日期 |
2001.09.28 |
| 申请人 |
LAAKSONEN REIMA T.;MEHRAD FREIDOON;GROSS CAMERON S. |
发明人 |
LAAKSONEN REIMA T.;MEHRAD FREIDOON;GROSS CAMERON S. |
| 分类号 |
H01L21/311;H01L21/3213;H01L21/4763;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/311 |
| 代理机构 |
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