发明名称 |
Substrate cleaning apparatus and method |
摘要 |
A method of processing a substrate 30 comprises exposing the substrate 30 to an energized process gas to etch features 67 on the substrate 30 and exposing the substrate 30 to an energized cleaning gas to remove etchant residue 70 and/or remnant resist 60 from the substrate 30. To enhance the cleaning process, the substrate 30 may be treated before, during or after the cleaning process by exposing the substrate 30 to an energized treating gas comprising a halogen species.
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申请公布号 |
US2002072016(A1) |
申请公布日期 |
2002.06.13 |
申请号 |
US20000737373 |
申请日期 |
2000.12.13 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
CHEN HAOJIANG;PAPANU JAMES S.;KAWAGUCHI MARK;HERCHEN HARALD;HWANG JENG H.;JIN GUANGXIANG;PALAGASHVILI DAVID |
分类号 |
G03F7/42;H01L21/02;H01L21/3213;(IPC1-7):G03F7/36 |
主分类号 |
G03F7/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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