发明名称 |
Nonvolatile memory and manufacturing method thereof |
摘要 |
Memory elements, switching elements, and peripheral circuits to constitute a nonvolatile memory are integrally formed on a substrate by using TFTs. Since semiconductor active layers of memory element TFTs are thinner than those of other TFTs, impact ionization easily occurs in channel regions of the memory element TFTs. This enables low-voltage write/erase operations to be performed on the memory elements, and hence the memory elements are less prone to deteriorate. Therefore, a nonvolatile memory capable of miniaturization can be provided.
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申请公布号 |
US2002070406(A1) |
申请公布日期 |
2002.06.13 |
申请号 |
US20010988729 |
申请日期 |
2001.11.20 |
申请人 |
YAMAZAKI SHUNPEI;KOYAMA JUN;HAYASHI KEISUKE |
发明人 |
YAMAZAKI SHUNPEI;KOYAMA JUN;HAYASHI KEISUKE |
分类号 |
H01L21/8247;H01L21/336;H01L21/77;H01L21/84;H01L27/115;H01L27/12;H01L29/786;H01L29/788;H01L29/792;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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