| 摘要 |
A semiconductor element comprises a semiconductor body (1) having a first and a second connecting zone (20, 30) of a first conductivity (n) and a channel zone (40) of a second conductivity (p) arranged between the connecting zones; a control electrode (50A, 50B, 50C) arranged next to the channel zone and insulated against the semiconductor body; and a recombination zone (80A, 80B, 80C) formed in the channel zone and the second connecting zone and made from a material for promoting the recombination of the charge carriers of a first and a second conductivity. An Independent claim is also included for the production of a semiconductor element. Preferred Features: The recombination zone is made from a metal, especially platinum. The connecting zones and the channel zone are arranged over each other. The recombination zones are formed in trenches in the semiconductor body.
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