| 发明名称 |
Method for transistor gate dielectric layer with uniform nitrogen concentration |
| 摘要 |
The instant invention describes a method for forming a dielectric film with a uniform concentration of nitrogen. The films are formed by first incorporating nitrogen into a dielectric film using RPNO. The films are then annealed in N2O which redistributes the incorporated species to produce a uniform nitrogen concentration.
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| 申请公布号 |
US2002072177(A1) |
申请公布日期 |
2002.06.13 |
| 申请号 |
US20010967044 |
申请日期 |
2001.09.28 |
| 申请人 |
GRIDER DOUGLAS T. |
发明人 |
GRIDER DOUGLAS T. |
| 分类号 |
H01L29/78;H01L21/28;H01L21/3115;H01L21/318;H01L29/51;(IPC1-7):H01L21/336;H01L21/76 |
主分类号 |
H01L29/78 |
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