Embedded gettering layer in shallow trench isolation structure

摘要

The invention includes a shallow trench isolation structure having a trench formed in the Si substrate and having an upper surface, a liner layer formed in the trench overlying the upper surface of the trench, a gettering material layer formed on the liner layer; and a filler oxide formed on the gettering material layer The gettering material layer inhibits the diffusion of metallic contaminants from the filler oxide into the surrounding silicon substrate regions