| 摘要 |
A capacitor element is formed by setting a contact hole in an interlayer insulating film 3, forming an adhesive film 5 and a lower electrode film 6, forming a capacitor insulating film 7 thereon, crystallizing this capacitor insulating film 7 by applying irradiation of a laser beam, and forming an upper electrode film. This capacitor element brings out characteristics of the metal oxide material to the utmost limit without diminishing the reliability of the element; or, this capacitor film performs a sufficiently high permittivity and a sufficiently high conductivity.
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