发明名称 |
Methods for deuterium sintering |
摘要 |
A method for deuterium sintering to improve the hot carrier aging of an integrated circuit includes (a) providing a partially fabricated integrated circuit structure comprising a semiconductor substrate and a dielectric layer formed on at least a portion of the substrate, the dielectric layer having at least one conductive material via plug formed therein and (b) sintering the structure in the presence of a gas comprising deuterium-containing components at high temperatures prior to a metallization layer being deposited on the structure.
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申请公布号 |
US2002072187(A1) |
申请公布日期 |
2002.06.13 |
申请号 |
US20000733570 |
申请日期 |
2000.12.08 |
申请人 |
CHETLUR SUNDAR SRINIVASAN;ROY PRADIP KUMAR;PATEL MINESH AMRAT;SEN SIDHARTHA;SAXENA VIVEK |
发明人 |
CHETLUR SUNDAR SRINIVASAN;ROY PRADIP KUMAR;PATEL MINESH AMRAT;SEN SIDHARTHA;SAXENA VIVEK |
分类号 |
H01L21/28;H01L21/30;H01L21/324;H01L21/768;(IPC1-7):H01L21/336;H01L21/44;H01L21/26;H01L21/42;H01L21/477 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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