发明名称 |
SEMICONDUCTOR DEVICE HAVING IMPROVED SHORT CHANNEL RESISTANCE |
摘要 |
First, first conductivity type impurities are injected into a semiconductor substrate to selectively form a first conductivity type region. Next, second conductivity type impurities higher in concentration than that of the first conductivity type impurities are injected into a predetermined region in the first conductivity type region to selectively form a second conductivity type region. Then, first conductivity type impurities are selectively injected into the second conductivity type region to selectively form a lightly doped second conductivity type region. By the step, a concentration distribution is formed in which a concentration of first conductivity type impurities increases from the first conductivity type region toward the lightly doped second conductivity type region.
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申请公布号 |
US2002070413(A1) |
申请公布日期 |
2002.06.13 |
申请号 |
US19990411942 |
申请日期 |
1999.10.04 |
申请人 |
TAKEUCHI KIYOSHI;KUMASHIRO SHIGETAKA |
发明人 |
TAKEUCHI KIYOSHI;KUMASHIRO SHIGETAKA |
分类号 |
H01L21/265;H01L21/336;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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