| 摘要 |
<p>The invention concerns a method for producing a positively doped semiconductor with large forbidden band, which consists in growing the semiconductor in the presence of an element capable of acting as surfactant at the growth surface and of inhibiting the formation of gaps; doping the semiconductor with an appropriate positive doping agent. Preferably, ZnO is used as semiconductor. The invention is useful for producing positively doped ZnO.</p> |
