发明名称 |
Resin, a double resin layer for extreme ultraviolet light (EUV) photolithography, and an extreme ultraviolet light (EUV) photolithography process |
摘要 |
A semiconductor substrate etching masking layer onto which the pattern to be etched can be transferred by photolithography at extreme ultraviolet light wavelengths from 10 to 100 nm and which is resistant to plasma etching. An ultraviolet light semiconductor integrated circuit photolithography process and the use for fabricating a double masking layer for semiconductor substrate etching of a photo-ablation layer sensitive to extreme ultraviolet light and resistant to deep ultraviolet light and/or ultraviolet light coupled to a polymer resin layer resistant to extreme ultraviolet light and to plasma etching when the resin has been developed and sensitive to deep ultraviolet light and/or to ultraviolet light.
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申请公布号 |
US2002072014(A1) |
申请公布日期 |
2002.06.13 |
申请号 |
US20010912057 |
申请日期 |
2001.07.25 |
申请人 |
SCHILTZ ANDRE |
发明人 |
SCHILTZ ANDRE |
分类号 |
G03F7/075;G03F7/095;(IPC1-7):G03F7/00 |
主分类号 |
G03F7/075 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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