| 发明名称 |
Semiconductor device and method of manufacturing the same |
| 摘要 |
A method of manufacturing a semiconductor device comprises the steps of: (a) forming a thermal oxide film on a surface of a silicon layer; (b) removing the thermal oxide film; and (c) forming a silicide film on the resulting surface of the silicon layer.
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| 申请公布号 |
US2002072233(A1) |
申请公布日期 |
2002.06.13 |
| 申请号 |
US20010960513 |
申请日期 |
2001.09.24 |
| 申请人 |
SUEYOSHI YASUHIKO |
发明人 |
SUEYOSHI YASUHIKO |
| 分类号 |
H01L21/28;H01L21/3205;H01L21/336;H01L23/52;H01L29/49;H01L29/78;(IPC1-7):H01L21/44;H01L21/823;H01L21/302 |
主分类号 |
H01L21/28 |
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代理人 |
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