| 摘要 |
<p>A high voltage vertical conduction semiconductor device has a plurality of deep trenches or holes (3) in a lightly doped body (2) of one conductivity type. A diffusion (4) of the other conductivity type is formed in the trench walls to a depth and a concentration which matches that of the body so that, under reverse blocking, both regions fully deplete. The elongated trench or hole (3) is filled with a dielectric which may be a composite of nitride and oxide layers having a lateral dimension change matched to that of the silicon. The filler may also be a highly resistive SIPOS (20) which permits leakage current flow from source to drain to ensure a uniform electric field distribution along the length of the trench during blocking.</p> |
