| 摘要 |
A film formation apparatus in plasma CVD and etching methods making use of an inductive coupling method. The apparatus comprises a plurality of plasma generators in inductive coupling method, one or more film formation gas discharge means, and a substrate setting means facing the plurality of plasma generators via a reaction zone. The film formation gas discharge means is included in each of two movable members capable of performing reciprocating motions along a substrate surface on the substrate setting means, while intersecting each other. Thereby, a plasma with a relatively high density can be uniformly created over a large area, the film formation gas excited by free radicals in the plasma can uniformly spread over the film formation target, and a film can be formed with a high deposition rate. Consequently, a large-sized substrate with a good quality of thin film can be provided.
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