| 摘要 |
<p>An apparatus (1) for treating a wafer, which has a heater (12), a reaction tube (2) for storing a wafer (10) having an organic material adhered thereto and, a first gas conduit (13) and a second gas conduit (14) for feeding an oxygen gas and a hydrogen gas, respectively, into the reaction tube (2); and a method for treating a wafer to be treated, which comprises feeding an oxygen gas and a hydrogen gas through the first gas conduit (13) and the second gas conduit (14), respectively, into the reaction tube (2), and heating the reaction tube (2) by the heater (12) to a temperature sufficient for activating the oxygen gas and hydrogen gas, to thereby allow a combustion reaction to take place and oxidize, decompose and remove the organic material adhered to the wafer (10).</p> |
