Semiconducting component has fourth semiconducting region of lower impurity concentration than first region, enclosing first region, arranged between second and third regions

摘要

The component has a first semiconducting region (14) of a first conductor type, a second region of the same type connected to the first at one end surface, a third region of a second type connected to the other end surface and a fourth region with an inner surface in contact with a lateral bounding surface and a lower impurity concentration than the first region. The fourth region encloses the first and is arranged between the second and third. The component has a first semiconducting region (14) of a first conductor type formed by two opposite end surface and a lateral bounding surface joining them, a second region (12) of the same type connected to the first at one end surface, a third region (13) of a second type connected to the other end surface and a fourth region (15) with an inner surface in contact with the lateral bounding surface and a lower impurity concentration than the first region. The fourth region encloses the first and is arranged between the second and third regions. An Independent claim is included for a method of manufacturing a semiconducting component.