Method of producing a ferroelectric memory and memory device

摘要

The present invention refers to a method of producing a ferroelectric memory which method comprises: a) providing ferroelectric particles, b) providing a substrate, c) orientating at least a subset of said ferroelectric particles such that there is an axis of said particles along which axis a dipole moment may be directed in the ferroelectric state, said axis having an orientation the average of which is in at least one predetermined direction with regard to a surface of said substrate, d) allowing said ferroelectric particles to attach to said substrate, and to a method of storing information on a substrate, and to a memory device. <IMAGE>