METHOD FOR FABRICATING GROUND BONDING REGION OF SEMICONDUCTOR PACKAGE

摘要

PURPOSE: A method for fabricating a ground bonding region of a semiconductor package is provided to reduce waste of gold or silver, by forming a region capable of ground wire bonding only in a desired portion while using a small amount of gold or silver. CONSTITUTION: A part of an oxidation blocking layer(18) formed on a heat sink(10) is eliminated by a laser beam. Gold or silver powder is supplied to the surface of the heat sink from which the oxidation blocking layer is removed. A laser beam is irradiated to the gold or silver power to clad the gold or silver power on the heat sink. The ground bonding region is locally formed on the heat sink by a laser cladding method.