METHOD FOR FABRICATING CAPACITOR

摘要

PURPOSE: A method for fabricating a capacitor is provided to prevent a diffusion barrier layer from being oxidized by oxygen diffusion in a dielectric layer deposition process and a subsequent heat treatment process, by performing a NH3 plasma process regarding oxygen remaining in a metal thin film for a lower electrode in a dielectric layer deposition chamber by an in-situ method. CONSTITUTION: The diffusion barrier layer is formed on a semiconductor substrate(21). A lower electrode is formed on the diffusion barrier layer. The semiconductor substrate having the lower electrode is transferred to a dielectric layer reaction chamber. A plasma treatment process is performed regarding the lower electrode in the dielectric layer reaction chamber. A dielectric layer is formed on the plasma-processed lower electrode in the dielectric layer reaction chamber. An upper electrode(30) is formed on the dielectric layer.