| 摘要 |
PURPOSE: A method for fabricating a ferroelectric memory device is provided to simplify a fabricating process by omitting a deposition process of a diffusion barrier layer, and to improve a margin regarding a subsequent heat process by preventing diffusion to a titanium capacitor even if the temperature of a subsequent heat process increases. CONSTITUTION: An interlayer dielectric is formed on a semiconductor substrate(31) regarding which a predetermined process is performed. The interlayer dielectric is selectively patterned to form a contact hole which simultaneously opens predetermined portions of a transistor and the capacitor. A titanium layer is formed on the entire surface including the contact hole. The titanium layer is selectively patterned to make the titanium layer left on the transistor. Titanium nitride(42a) and aluminum(42b) are sequentially formed on the interlayer dielectric including the remaining titanium layer. The aluminum and the titanium nitride are selectively patterned to form a metal interconnection connecting the transistor with the capacitor.
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