| 发明名称 |
C-AXIS PEROVSKITE THIN FILMS GROWN ON SILICON DIOXIDE |
| 摘要 |
A method and resulting structure for growing a crystalline perovskite film (16) on a silicon dioxide layer (12) by means of an intermediate template layer (14) of a c-axis oriented layered perovskite, such as bismuth titanate. The perovskite film can be ferroelectric lead-lanthanum zirconate titanate or conductive cubic metal oxides used as electrodes for the ferroelectric. |
| 申请公布号 |
EP0673311(B1) |
申请公布日期 |
2002.06.12 |
| 申请号 |
EP19940900439 |
申请日期 |
1993.10.28 |
| 申请人 |
TELCORDIA TECHNOLOGIES, INC. |
发明人 |
RAMESH, RAMAMOORTHY |
| 分类号 |
B32B9/00;B32B17/06;C23C14/08;C30B29/32;H01F10/28;H01G4/33;H01G7/06;H01L21/02;H01L21/314;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/105;H01L27/108;H01L27/115;H01L29/788;H01L29/792;H01L39/02;H01L41/22;(IPC1-7):H01L21/316;H01L21/320 |
主分类号 |
B32B9/00 |
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