Nitride compound semiconductor element for FET, HEMT or HBT

摘要

On a substrate is epitaxially grown an AIN film as an underlayer having a dislocation density of 10<11>/cm<2> or below and a crystallinity of 90 seconds or below in full width at half maximum (FWHM) of X-ray rocking curve at (002) reflection. Then, on the AlN film is epitaxially grown an n-GaN film as a conductive layer having a dislocation density of 10<10>/cm<2> or below and a crystallinity of 150 seconds or below in full width at half maximum (FWHM) of X-ray rocking curve at (002) reflection, to fabricate a semiconductor element.