发明名称 |
Selective substrate implant process for decoupling analog and digital grounds |
摘要 |
<p>An integrated circuit fabrication process includes a selective substrate implant process to effectively decouple a first power supply connection from a second power supply connection while providing immunity against parasitic effects. In one embodiment, the selective substrate implant process forms heavily doped p-type regions only under P-wells in which noise producing circuitry are built. The noisy ground connection for these P-wells are decoupled from the quiet ground connection for others P-wells not connected to any heavily doped regions and in which noise sensitive circuitry are built. The selective substrate implant process of the present invention has particular applications in forming CMOS analog integrated circuits where it is important to decouple the analog ground for sensitive analog circuitry from the often noisy digital grounds of the digital and power switching circuitry.</p> |
申请公布号 |
EP1213760(A2) |
申请公布日期 |
2002.06.12 |
申请号 |
EP20010128845 |
申请日期 |
2001.12.04 |
申请人 |
MICREL INCORPORATED |
发明人 |
MCCORMACK, STEPHEN;ALTER, MARTIN;WRATHALL, ROBERT S.;LABER, CARLOS ALBERTOS |
分类号 |
H01L21/761;H01L21/8238;H01L27/092;(IPC1-7):H01L21/823;H01L27/088 |
主分类号 |
H01L21/761 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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