Optoelectronic semiconductor device

摘要

A semiconductor laser device comprises an active region (2) for emission of light. The device further comprises a guiding region (3) and a cladding region (4). A superlattice region (13) is disposed between the guiding region (3) and the cladding region (4). The superlattice region has a repeating pattern of layers of a first semiconductor and layers of a second semiconductor. The first and second semiconductors are each members of the (AlGaIn)N alloy system.