发明名称 Integrert kretspakke dannet på et silisiumskivenivå
摘要 An integrated circuit package that is formed at the wafer level. The integrated circuit package occupies a minimum amount of space on an end-use printed circuit board. A pre-fabricated interposer substrate, made of metal circuitry and a dielectric base, has a plurality of metallized openings which are aligned with metallized wirebond pads on the top surface of a silicon wafer. Solder, or conductive adhesive, is deposited through the metallized openings to form the electrical connection between the circuitry on the interposer layer and the circuitry on the wafer. Solder balls are then placed on the metal pad openings on the interposer substrate and are reflowed to form a wafer-level BGA structure. The wafer-level BGA structure is then cut into individual BGA chip packages.
申请公布号 NO20022792(A) 申请公布日期 2002.06.12
申请号 NO20020002792 申请日期 2002.06.12
申请人 ATMEL CORP 发明人 LAM, KEN M
分类号 H01L23/12;H01L23/485 主分类号 H01L23/12
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