| 摘要 |
PURPOSE: A non-volatile ferroelectric memory device is provided to remove a defective cell without a test mode under various processing condition by constituting a supplied source voltage detecting circuit and by controlling a data stored in a memory cell from the outer through varying a restore pulse width size. CONSTITUTION: A non-volatile ferroelectric memory device comprises a cell driving part(50) composed of an upper cell array part, a lower cell array part, a sensing amplifier(S/A) for respectively sensing the upper and lower cell array parts, and a word line driver(57) selectively driving the upper and lower cell array parts, an X-decoder(51) selectively supplying a word line decoding signal to the word line driver(57), and a pulse width generator(56) having the supplied source voltage detecting circuit(54) and a pulse width varying controller(55) for supplying a varied width of a restore pulse(PW1) to the word line driver(57) so as to detect a defective cell of the upper and lower cell array parts.
|
