LAYER STRUCTURE FOR BIPOLAR TRANSISTORS AND METHOD FOR THE PRODUCTION THEREOF

摘要

The invention relates to a layer structure for bipolar transistors, to a method for the production thereof, and to a method for producing integrated circuits using said layer structure. The aim of the invention is to provide a layer structure for bipolar transistors with which the electric properties and the homogeneity of bipolar transistors are improved. In particular, the base current behavior should be improved and the noises should be decreased with diminished emitter transition resistances. In addition, the invention seeks to provide a method for producing bipolar transistors using a layer structure of this type. To these ends, the invention provides that the vertical structure of the transistors contains a partial single-crystalline emitter layer (5) which changes into a polycrystalline and/or amorphous layer above an epitactical single-crystalline growth layer and, in the vertical structure of the transistor, the partial single-crystalline emitter layer (5) is locally underlayed with thin oxide and/or nitride layers.