| 摘要 |
PURPOSE: A method for fabricating a poly layer of a fine structure is provided to control a penetration phenomenon of boron in a p-channel metal oxide semiconductor(PMOS) and to improve reliability of a gate oxide layer, by making a doped layer have a different grain size than that of an undoped layer so that an interfacial surface for intercepting migration of ions is formed between the doped layer and the undoped layer. CONSTITUTION: A poly layer(42) of the first thickness is grown on a substrate(41). A doped layer is formed on the poly layer of the first thickness. A poly layer of the second thickness is grown while a doping process for forming the doped layer having the poly layer is intercepted, so that the interfacial surface(43) is formed between the poly layers by a doping process. The process for forming the doped layer and the process for growing the poly layer are repeated.
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