发明名称 |
Dual damascene bond pad structure for lowering stress and allowing circuitry under pads and a process to form the same |
摘要 |
A dual damascene bond pad (27) resistant to stress effects within an integrated circuit is disclosed, allowing for the bond pad (27) to be formed over a substrate (1) containing active circuitry. The dual damascene structure is created by forming bond pad opening (20) and vias (19) in region (40), and depositing metal film (17) in the opening (20) and vias (19). The opening has barrier layer film (13) on bottom surface of opening (20) and vias (19) extending downwardly through barrier layer film (13) and lower dielectric film (11). A conductive layer (5) may be interposed between substrate region (1) and lower dielectric film (11). The reduction in stress of bond pad (27) results in the pad (27) being more resistant to cracking when an external wire (25) is attached to the pad (27), thus preventing leakage currents between the bond pad (27) and any underlying circuitry. |
申请公布号 |
GB2364170(B) |
申请公布日期 |
2002.06.12 |
申请号 |
GB20000030319 |
申请日期 |
2000.12.12 |
申请人 |
* LUCENT TECHNOLOGIES INC |
发明人 |
SAILESH * CHITTIPEDDI;WILLIAM THOMAS * COCHRAN;YEHUDA * SMOOHA |
分类号 |
H01L23/52;H01L21/3205;H01L21/60;H01L21/768;H01L23/485;H01L23/532 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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