METHOD FOR FABRICATING FINE PATTERN OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a fine pattern of a semiconductor device is provided to improve yield of an etch process and reliability of an operating device, by irradiating an electron beam to a photoresist layer pattern for ArF so that the photoresist layer pattern is hardened and etch resistivity is increased and by performing an etch process. CONSTITUTION: The photoresist layer pattern for ArF is formed on a layer(12) of an insulation material formed on a predetermined substrate(10) by a selective exposure and developing process. An electron beam is irradiated to the entire surface of the resultant structure to harden the photoresist layer pattern for ArF. The layer is etched to form an etch layer pattern by using the photoresist layer pattern as a mask.