| 摘要 |
PURPOSE: A saving circuit of semiconductor memory device is provided to efficiently save defective cells by separating a plurality of defective cells from one defective cell in row and column. CONSTITUTION: A saving circuit comprises a present address output parts(21) supplying an address received from the outer, a first and a second repair address storage parts(22,23) respectively storing a first repair address, that is, an address of a multiple of defective memory cells, and a second repair address, that is, an address of one defective memory cell, a first and a second address comparators(24,25) respectively comparing a present address with the first and second repair addresses, a main word/bit line(27) accessing a normal cell according to the results of the first or second address comparators(24,25), a column/low redundancy array(26) saving the multiple of defective memory cell according to the result of the first address comparator(24), and a redundancy cell(28) saving one defective memory cell according to the result of the second address comparator(25).
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