METHOD FOR FABRICATING HEMISPHERICAL GRAIN CAPACITOR

摘要

PURPOSE: A method for fabricating a hemispherical grain capacitor is provided to prevent adjacent lower electrodes from being short-circuited, by preventing the lower electrodes from protruding over a mold insulation layer even if a part of the mold insulation layer is eliminated by the limit of etch selectivity when removing a planarizing insulation layer. CONSTITUTION: The mold insulation layer(140) having an opening in a region for a capacitor is formed on a substrate. Silicon of a uniform thickness is deposited on the mold insulation layer to form a lower electrode layer having a concave part. An insulation material is deposited on the lower electrode layer to fill the concave part so that the planarizing insulation layer(180') is formed. The planarizing insulation layer and the lower electrode layer are eliminated until the mold insulation layer is exposed so that a cylindrical lower electrode(165) is formed. A part of the upper portion of the lower electrode is removed to be lower than the surface of the planarizing insulation layer and the mold insulation layer. The planarizing insulation layer is removed to expose the concave part of the lower electrode. A hemispherical grain is formed on the surface of the concave part of the exposed lower electrode. A dielectric layer and an upper electrode are formed on the cylindrical lower electrode having the hemispherical grain.