发明名称 |
Method of forming a dual damascene structure including smoothing the top part of a via |
摘要 |
A dual damascene manufacturing process, which is applicable on a dual damascene structure, is described. The etching stop layer at a bottom of the trench line is removed followed by a thermal treatment to smooth out the surface at the bottom of the trench line and in the via to form a larger and smoother opening at the top part of the via. The via and the trench line are then filled with a barrier layer and a metal layer.
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申请公布号 |
US6403471(B1) |
申请公布日期 |
2002.06.11 |
申请号 |
US19990429601 |
申请日期 |
1999.10.28 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LOU CHINE-GIE |
分类号 |
H01L21/768;(IPC1-7):H01L21/476;H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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