发明名称 Method of forming a dual damascene structure including smoothing the top part of a via
摘要 A dual damascene manufacturing process, which is applicable on a dual damascene structure, is described. The etching stop layer at a bottom of the trench line is removed followed by a thermal treatment to smooth out the surface at the bottom of the trench line and in the via to form a larger and smoother opening at the top part of the via. The via and the trench line are then filled with a barrier layer and a metal layer.
申请公布号 US6403471(B1) 申请公布日期 2002.06.11
申请号 US19990429601 申请日期 1999.10.28
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LOU CHINE-GIE
分类号 H01L21/768;(IPC1-7):H01L21/476;H01L21/44 主分类号 H01L21/768
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