PLATING METHOD, PLATING SOLUTION, SEMI-CONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To prevent voids or seams from being generated in grooves or holes in a copper plating process in a semi-conductor. SOLUTION: In the process for depositing a film on a substrate having grooves of the height h and the width w or holes of the radium w, two kinds of additives 1 and 2 in which the ratio D/κof the diffusion factor D [m2/sec] of the additives to impair the film deposition to the reaction speedκ[m/s] of adsorption or consumption on the surface satisfies the formulae below are used under the condition that the ratio of (the film deposition speed with additive) to (the film deposition speed without additive) at the same plating electric potential is >=0.01 and <=0.7. Additive 1:0.05×h12/w1