| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition apparatus and a film deposition method in which the film deposition speed is high, and the deposition property is excellent. SOLUTION: Ion beam IB emitted from an orifice 40a is made incident in a surface of a substrate W while being difused. The ion beam IB is controlled in a predetermined energy condition, and decomposes molecules of precursor gas PG adhered to the surface of the substrate W to deposit a thin film formed of wiring metal. etc., on the substrate W. Since the precursor gas PG enters a recess in the surface of the substrate W, the thin film can also be deposited on the side surface of the recess with relatively excellent deposition property. The substrate W need not be heated at high temperature, reduces damages on the substrate W during the film deposition. In addition, the ion beam IB is obtained by ionizing the same atomic species as those of a film material such as Cu for the wiring metal, and the thin film can be deposited directly, on the surface of the substrate W by the ion beam IB itself by making the ion beam IB incident on the surface of the substrate W.
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