发明名称 Semiconductor device
摘要 In a semiconductor device in which an analog section to which power source lines Vdd1 and Vss1 are supplied and a digital section to which power source lines Vdd2 and Vss2 are supplied are mounted in an N-type semiconductor substrate and connected to each other by a signal line S11, a protection circuit HK1 is located between the power source line Vdd1 and Vdd2, the protection circuit becoming conductive when a potential difference between the power source lines Vdd1 and Vdd2 exceeds a prescribed value irrespectively of the direction of a surge input, thereby placing the power source lines Vdd1 and Vdd2 at substantially the same potential.
申请公布号 US6404016(B1) 申请公布日期 2002.06.11
申请号 US20000520547 申请日期 2000.03.08
申请人 SANYO ELECTRIC CO. LTD. 发明人 HIGUCHI FUKUJI;MORI MITSUO
分类号 H01L27/04;G06F1/30;H01L21/822;H01L23/62;(IPC1-7):H01L23/62 主分类号 H01L27/04
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