| 摘要 |
PURPOSE: A method for fabricating a passivation layer of a semiconductor device is provided to prevent a defect of a metal interconnection caused by a void by forming a capping layer under an uppermost metal interconnection and making the uppermost metal interconnection protected by a polyimide layer. CONSTITUTION: After a lower metal interconnection(13) is formed on a silicon substrate(11) having an insulation layer(12), an intermetal dielectric(14) is formed on the resultant structure and the surface of the intermetal dielectric is planarized. The capping layer(15) of a high index of refraction is formed on the intermetal dielectric. An upper metal interconnection(16) is formed on the capping layer and the polyimide layer(17) is formed on the resultant structure.
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