| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a magnetic multilayered film deposition system which has a structure commonly used for the manufacture of TMR device and MRAM and is fitted to the manufacture of a magnetic multilayered film by semiconductor-device manufactures and by which properties of the film can be increased and productivity can be improved. SOLUTION: In the magnetic multilayered film deposition system 10, each of a plurality of magnetic films is successively deposited in laminated state onto a substrate to deposit the magnetic multilayered film. The magnetic multilayered films are divided into a plurality of groups (A, B, C), and each of the plurality of groups is composed of a plurality of magnetic films which are continuously deposited into laminated state. The plurality of magnetic films contained in each of the plurality of groups are successively deposited onto a substrate in one and the same film deposition chamber (17A, 17B, 17C), respectively. Film deposition is performed indifferent film deposition chambers for the respective groups.</p> |
