发明名称 SINGLE CRYSTAL WAFER
摘要 PROBLEM TO BE SOLVED: To provide an LT wafer whose mechanical strength is improved in cracking and chipping and a yield during a mechanical process and a device process is enhanced, and its edging method. SOLUTION: A side 1c of an wafer 1 consisting of a lithium tantalate single crystal is so edged that its cleavage face of >=20% is contained, especially arithmetic mean-surface roughness (Ra) is <=1μm.
申请公布号 JP2002167298(A) 申请公布日期 2002.06.11
申请号 JP20000364016 申请日期 2000.11.30
申请人 KYOCERA CORP 发明人 INOUE SHINJI
分类号 C30B29/30;C30B33/00;H01L21/304;(IPC1-7):C30B29/30 主分类号 C30B29/30
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