| 发明名称 |
Shallow trench isolation having an etching stop layer and method for fabricating same |
| 摘要 |
A shallow trench isolation having an etching stop layer and its method of fabrication. The method utilizes a shield layer such as a silicon nitride layer to serve as an etching stop layer. The etching stop layer is formed in the top position of the shallow trench isolation.
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| 申请公布号 |
US6403483(B1) |
申请公布日期 |
2002.06.11 |
| 申请号 |
US20000695144 |
申请日期 |
2000.10.25 |
| 申请人 |
NANYA TECHNOLOGY CORP. |
发明人 |
HAO CHUNG-PENG;HUANG CHUNG-LIN;LEE CHUNG-YUAN;SHAO YIH-REN;LEE PEI-ING |
| 分类号 |
H01L21/60;H01L21/762;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/60 |
| 代理机构 |
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| 主权项 |
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