发明名称 |
Method for forming storage capacitor having undulated lower electrode for a semiconductor device |
摘要 |
This invention provides a capacitor including a metal lower electrode having an undulated shape and an improved electrode area, and a method of manufacturing the same. A capacitor for data storage is formed on a semiconductor substrate (not shown) via an insulating interlayer having a contact plug. The capacitor has a lower electrode whose inner and outer surfaces are rough or undulated such that one surface has a shape conforming to the shape of the other surface, a dielectric film formed to cover the surfaces of the lower electrode, and an upper electrode formed to cover the lower electrode via the dielectric film. The lower electrode has a cylindrical shape with an open upper end. The lower electrode is connected to a cell transistor through the contact plug. The lower electrode is formed from a metal or a metal oxide.
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申请公布号 |
US6403444(B2) |
申请公布日期 |
2002.06.11 |
申请号 |
US20010800915 |
申请日期 |
2001.03.08 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUKUZUMI YOSHIAKI;KOHYAMA YUSUKE |
分类号 |
H01L21/8242;H01L21/02;H01L21/8246;H01L27/105;H01L27/108;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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